Description: Please refer to the section BELOW (and NOT ABOVE) this line for the product details - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Title:Nitride Wide Bandgap Semiconductor Material And Electronic DevicesISBN13:9780367574369ISBN10:0367574365Author:Hao, Yue (Author), Zhang, Jin Feng (Author), Zhang, Jin Cheng (Author)Description:This Book Systematically Introduces Physical Characteristics And Implementations Of Iii-Nitride Wide Bandgap Semiconductor Materials And Electronic Devices, With An Emphasis On High-Electron-Mobility Transistors (Hemts) The Properties Of Nitride Semiconductors Make The Material Very Suitable For Electronic Devices Used In Microwave Power Amplification, High-Voltage Switches, And High-Speed Digital Integrated Circuits Binding:Paperback, PaperbackPublisher:CRC PressPublication Date:2020-06-30Weight:0 lbsDimensions:Number of Pages:392Language:English
Price: 64.54 USD
Location: USA
End Time: 2025-01-03T18:03:41.000Z
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Author: Hao, Yue (Author)
Book Title: Nitride Wide Bandgap Semiconductor Material And Electronic D...
Language: English
Format: Paperback
Publisher: CRC Press
Publication Year: 2020
Item Weight: 0 lbs
