Description: Mixed Lot DDR2 DDR3 Ram 256mb-4gb Memory. Hynix Micron Samsung Die. Tested / WorksWill ship within 24 hours. Parts Numbers: MICRON 2GB PC2-5300F DDR2-667 FULLY BUFFERED ECC 2RX4 CL5 240 PIN 1.8V MEMORY MODULE (MT36HTF25672FY-667D1N6) HP X2 sticksA-Tech 4GB RAM Replacement for Samsung M378A5143EB1-CPB | DDR4 2133MHz PC4-17000 1Rx8 1.2V UDIMM Non-ECC 288-Pin DIMM Memory Module (Samsung Die) Elpid a EBE10UE8AFFA-8G-F 1GB Desktop DIMM DDR2 PC6400(800mhz) UNBUF 1.8v 1RX8 240P 128MX64 128mX8 CL6 (Dell) Samsung M378T2953BG0-CD5 PC2-4200U-444 1GB 2Rx8 DDR2 533MHz 240-pin DIMM, Non-ECC Desktop Memory X2 sticksApacer AU01GE800C5NBGC 1GB PC2-6400 DDR2-800MHz non-ECC Unbuffered CL5 240-Pin DIMM Dual Rank Memory Module Hynix HYMD512G726BF4N-J PC2700R-25330 1GB Server Memory RAM HPNanya NT512D64S8HC0G-5T DDR 512MB PC-3200 Non ECC 400Mhz CL3 RAM MemoryNanya NT256D64S88B0G-75B 256MB DDR-266MHz-CL2.5 PC2100U-25330 RAM Memory
Price: 41 USD
Location: Garden City, Michigan
End Time: 2024-11-28T19:05:10.000Z
Shipping Cost: N/A USD
Product Images
Item Specifics
All returns accepted: ReturnsNotAccepted
Total Capacity: 4 GB
Capacity per Module: 4 GB
ECC: No
Custom Bundle: No
MPN: HMT451U6BFR8A, MT8KTF51264AZ, M378B5173DB0
Rank: 1Rx8
Item Length: 133mm
Memory Features: Non-ECC Unbuffered
Brand: Hynix Kingston Samsung Micron
Form Factor: DIMM
Type: DDR3 SDRAM
Number of Modules: 1
CAS Latency: 11
Item Height: 3mm
Voltage: 1.35V
Buffered/Registered: Unbuffered
Bus Speed: PC3-12800 (DDR3-1600)
Item Width: 30mm
